Robust surface state transport in thin bismuth nanoribbons

نویسندگان

  • Wei Ning
  • Fengyu Kong
  • Yuyan Han
  • Haifeng Du
  • Jiyong Yang
  • Mingliang Tian
  • Yuheng Zhang
چکیده

While a two-dimensional (2D) metallic surface state in bismuth has been proposed, experimental 2D evidence of quantum transport, e.g., angular dependent Shubnikov-de Haas (SdH) oscillations is still lacking. Here, we report the angular-dependent magnetoresistance measurements in single-crystal Bi nanoribbons, and found that both the low-field weak antilocalization behavior and the high-field angle-dependent SdH oscillations follow exactly the 2D character, indicative of the 2D metallic surface states which dominate the transport properties of thin Bi nanoribbons. Moreover, by controllable exposing the ribbons to ambient environment (1 atm and room temperature), the metallic surface states were found to be robust to the oxidation although the carrier density in the surface states are modified after the exposures. These results suggest that the metallic surface states in Bi nanoribbons should be topologically protected which can provide key information in understanding the surface properties of Bi in nanometer scale.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Ultrathin topological insulator Bi2Se3 nanoribbons exfoliated by atomic force microscopy.

Ultrathin topological insulator nanostructures, in which coupling between top and bottom surface states takes place, are of great intellectual and practical importance. Due to the weak van der Waals interaction between adjacent quintuple layers (QLs), the layered bismuth selenide (Bi(2)Se(3)), a single Dirac-cone topological insulator with a large bulk gap, can be exfoliated down to a few QLs. ...

متن کامل

Magnetic doping and kondo effect in bi(2)se(3) nanoribbons.

A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume ...

متن کامل

Supporting information for Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

Using Fe-Au and Ni-Au thin films as catalysts for the VLS growth of Bi 2 Se 3 nanoribbons, we obtain two distinct morphologies in the case of Fe-Au thin films and three distinct morphologies in the case of Ni-Au thin films. For Fe-doped Bi 2 Se 3 nanoribbons, we observe wide nanoribbons (Fig. S1(c,d)) and narrow, long nanoribbons (Fig. S1(e,f)). For Ni-doped Bi 2 Se 3 nanoribbons, we observe wi...

متن کامل

Quantum coherent transport in SnTe topological crystalline insulator thin films

Articles you may be interested in Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition Appl.

متن کامل

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons.

Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with large surface-to-volume ratios and highly controlled stoichiometry. Se vacancies in Bi(2)Se(3) give rise to bulk conduction, which masks the t...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 4  شماره 

صفحات  -

تاریخ انتشار 2014